PART |
Description |
Maker |
HYI18T1G400BF-2.5 HYI18T1G400BF-2.5F HYI18T1G800BC |
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68 1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.6 ns, PBGA68 1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68 1-Gbit Double-Data-Rate-Two SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84 1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG http://
|
HYB18T1G160BF-2.5F HYB18T1G160BF-3S HYB18T1G400BF- |
1-Gbit Double-Data-Rate-Two SDRAM 1-Gbit Double-Data-Rate-Two SDRAM
|
http:// Qimonda AG
|
GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM 1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
EM423M3284LBA-8FE EM424M3284LBA-75FE EM424M3284LBA |
512Mb (4MBank2) Double DATA RATE SDRAM 512Mb (4MBank32) Double DATA RATE SDRAM 512Mb (4M4Bank2) Double DATA RATE SDRAM
|
Electronic Theatre Controls, Inc.
|
M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
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W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL 128Mbit DDR SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
|
HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60 512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
NT5DS32M8AW-8B NT5DS64M4AT-8B NT5DS32M8AT-75B NT5D |
256Mb Double Data Rate SDRAM
|
ETC[ETC]
|